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Process Overview


Process Type Attributes TriQuint Process Name Wafer Size Status
GaN High power thru 18 GHz 0.25µm GaN 3MI 75 mm Limited
pHEMT Enhancement & Depletion Mode FETs TQPED 150 mm Full
Low noise pHEMT TQP13-N 150 mm Full
Depletion Mode FETs,
0.15µm Optical Gate		 TQP15 150 mm Advanced Info
Enhancement & Depletion Mode FETs, (0.25µm and 0.35µm Optical Gates) TQP25 150 mm Limited
High power density through 20GHz 0.25-µm XKu pHEMT 3MI 100 mm Full
Higher power density through 50GHz 0.25-µm mmW pHEMT 3MI 100 mm Full
Higher power density through 80GHz 0.15-µm PWR pHEMT 3MI 100 mm Full
Highest power density 0.35-µm PWR pHEMT 3MI 100 mm Full
mHEMT Very low noise 0.15-µm LN mHEMT 3MI 100 mm Full
MESFET Enhancement & Depletion Mode FETs TQTRx 150 mm Full
Depletion Mode FET TQHiP/HA2 150 mm Full
Heterostructure FET High linearity 0.5-µm HFET 2MI 100 mm Full
InGaP HBT InGaP HBT 3 Metal TQHBT3 150 mm Full
BiHEMT Integrated E/D pHEMT & HBT TQBiHEMT 150 mm Limited
Vertical PIN Diode Low loss switches VPIN 2MI 100 mm Full
Passives Integrated Passives TQRLC 150 mm Full

Advanced Information Processes


TQP15

0.15um optical self aligned gate depletion pHEMT process couple with high density capacitors, epi resistors, thin film resisters (TFR) and 2 layers of gold interconnect encapsulated in a high performance interlayer die electric. With a typical Ft of 85GHz and a pinch-off voltage of -1.0V. TQP15 is well suited for Ka and Ku-band power amplifiers.

Applications: VSAT, satellite communications, point- to-point radio


Limited Release Processes

TQBiHEMT

Process is based 0.7 um TQPED and TQHBT3.1 designed for high ruggedness, high power applications. Targeted for integration of power amplifiers with linear, low loss and high  isolation RF switch applications, converters and integrated RF Front Ends. The three metal interconnecting layers are encapsulated in a high performance dielectric that allows wiring flexibility, optimized die size and plastic packaging simplicity. Precision NiCr resistors and high value MIM capacitors allow higher levels of integration, while maintaining smaller, cost-effective die sizes.


TQP25

0.25um optical self aligned gate depletion pHEMT with 0.35um optical enhancement pHEMT process coupled with high density capacitors, epi resistors, thin film resisters (TFR) and 2 layers of gold interconnect encapsulated in a high performance interlayer die electric. With a typical Ft of 45GHz and a depletion pinch-off voltage of -0.9V. TQP25 is well suited for Ku-band power amplifiers and high throw-count, high linearity switches

Applications: point- to-point radio, WiMAX, WCDMA and medium power PAs

Full Release Processes


TQRLC

Low cost, passives only process with high density, thick interconnects. A four layer interconnect system features thick metals up to 9 microns in total thickness for very high Q inductors. Precision nichrome resistors and MIM capacitors are also included.

Applications: Matching circuits, transformers, and baluns.

TQTRx

Advanced 0.6 micron enhancement/depletion mode MesFET process with an integrated power MesFET and three thick global metal interconnect layers. This process supports RF applications up to Ku-band and mixed mode applications up to LSI complexity. The three metal layers are encapsulated in a high performance interlayer dielectric that allows tremendous wiring flexibility and plastic packaging simplicity. Precision nichrome resistors and very high value MIM capacitors are included.

Applications: Wireless tranceivers.

TQHiP

Depletion mode MesFET process featuring thick metals up to 6.3 microns thick. The process is a general purpose RF block process. Precision nichrome resistors and high value MIM capacitors are also included. The MesFETs are tuned for maximum saturation current and power output for Power Amplifiers and Switches.

Applications: Power amplifiers and switches.

TQHBT3

TriQuint’s TQHBT3 process is a highly reliable InGaP HBT process with three levels of interconnecting metal and state-of-the-art device performance. Thick metal interconnects and high quality passives promote integration. The thick metal interconnects, which promote enhanced thermal management, and high density capacitors keep die sizes small. MOCVD epitaxial processes are utilized to grow the active layers. A carbon-doped Base and InGaP Emitter are utilized for high RF performance consistent with high reliability. Designs utilizing the 3-um emitter width have the performance of previous 2-um emitters, but with the reliability and ruggedness associated with wider emitters. Precision NiCr resistors and high value MIM capacitors are included. The three metal layers are encapsulated in a high performance dielectric that allows wiring flexibility and plastic packaging simplicity.

TQPED

0.5 micron optical gate enhancement and depletion pHEMT process featuring three thick global metal interconnect layers. The three metal layers are encapsulated in a high performance interlayer dielectric that allows tremendous wiring flexibility and plastic packaging simplicity. Precision nichrome resistors and very high value MIM capacitors are included.

Applications: Switches integrated with digital logic, low-noise amplifiers, power amplifiers and integrated transceivers.

TQP13-N

0.13um optical self aligned gate depletion pHEMT process coupled with high density capacitors, epi resistors, thin film resistors (TFR), and 2 layers of gold interconnect. With a typical Ft of 95GHz, TQP13-N is used for V-band automotive radar, and high frequency point-to-point radio applications.

Applications: Direct broadcast satellite (DBS) LNB and down convert, automotive radar, satellite communications, low noise Pt-to-Pt radio LNA.

100-mm Production Processes

0.5-µm Heterostructure FET (HFET)

The 0.5-µm Heterostructure FET (HFET) process is a depletion-mode 2MI process for applications through 20 GHz. The HFET I-V characteristics provide for high-power, high-linearity, extrordinary transconductance uniformity and high breakdown voltages. Passives include 2 thick-metal interconnect layers, precision TaN resistors, GaAs resistors, MIM capacitors and through-substrate vias. The via-under-cap process aids size compaction and offers excellent grounds at higher frequencies.

Applications: Power amplifiers, limiting amplifiers, digital and analog phase shifters, digital and analog attenuators, mixers, multipliers, switches and oscillators.

Vertical P-I-N Diode (VPIN)

The Vertical P-I-N (VPIN) Diode process is excellent for low-loss limiters, switches, and phase shifters. Using this process, TriQuint has produced switches with high power handling capability, low on-state resistance, and low off-state capacitance. The higher cutoff frequency of the PIN diode element makes this switch ideal for broadband electronic components and communication systems. Passives include 2 thick-metal interconnect layers, precision TaN resistors, GaAs resistors, MIM capacitors, and through-substrate vias. The via-under-cap process aids size compaction and offers excellent grounds at higher frequencies.

Applications: Low-Loss Limiters, Switches, and Phase Shifters.

3-Metal-Interconnect Passives (3MI)

The 3MI passive process is available on each of the 100-mm processes described below. Flexible design rules allow for curved lines and other complex shapes giving the designer unmatched flexibility for high-frequency circuitry. Precision resistors and capacitors, including the TriQuint Texas capacitor-on-via configuration (for minimizing undesired parasitic reactance and die area) are also included. However, this process offers smaller line width and spacing, smaller through-substrate plated via hole size, higher pF/mm2 capacitance, and 3 levels of interconnect metal. All of these enhancements allow the designer to further reduce chip size and cost of the die.

0.15-µm PWR pHEMT 3MI

The 0.15-µm power pHEMT 3MI process combines high power density and gain per stage performance. It is suitable for applications through 80 GHz. The 0.15-µm PWR pHEMT 3MI process has demonstrated excellent performance in low-noise amplifiers, limiting amplifiers, driver amplifiers, differential amplifiers and transimpedance amplifiers. The capacitor-over-via process aids size compaction and offers excellent grounds at higher frequencies.

Applications: Low-Noise Amplifiers, Driver Amplifiers, Power Amplifiers, Digital and Analog Phase Shifters, Mixers, Shifters, Multipliers

0.15-µm LN mHEMT 3MI

The 0.15-µm LN mHEMT 3MI process utilizes T-gates in conjunction with a mHEMT material structure optimized for low-noise operation. It is suitable for applications through 100 GHz. These depletion-mode transistors demonstrate the lowest noise figure available in a TriQuint Texas process, with a high level of available gain. The 0.15-µm mHEMT 3MI process has demonstrated excellent performance in low-noise amplifiers, small signal gain block amplifiers, driver amplifiers, wideband data amplifiers and transimpedance amplifiers. The capacitor-over-via process aids size compaction and offers excellent grounds at higher frequencies.

Applications: Low-Noise Amplifiers, Driver Amplifiers, VCO's, point-to-point radio, point-to-multipoint radio, Broadband data amplifiers, Automotive radar

0.25-µm mmW pHEMT 3MI

The 0.25-µm mmW pHEMT 3MI process combines high power density and high gain per stage performance. The process is optimized for high-power and low-noise operation through 50 GHz. Passives include 3 thick-metal interconnect layers, precision TaN resistors, GaAs resistors, through-substrate vias and 3 MIM capacitance densities. Through-substrate vias and our via-under-cap process offers excellent grounds at higher frequencies. Air bridges produce minimal interconnect capacitance and the 3MI’s protective overcoat layer provides environmental robustness.

Applications: Power amplifiers, low-noise amplifiers, digital and analog phase shifters, digital and analog attenuators, limiters, mixers and multipliers.

0.25-µm XKu pHEMT 3MI

The 0.25-µm XKu pHEMT 3MI process utilizes T-gates in conjunction with a pHEMT material structure. This process is optimized for high-power and low-noise operation through 20 GHz. The process demonstrates comparable power density and gain to the 0.25-µm mmW pHEMT process at X-band frequencies and similar bias conditions. However, the 0.25-µm XKu pHEMT offers a higher breakdown voltage allowing higher bias voltages to be applied to deliver higher power densities. Passives include 3 thick-metal interconnect layers, precision TaN resistors, GaAs resistors, through-substrate vias and 3 MIM capacitance densities. The via-under-cap process aids size compaction and offers excellent grounds at higher frequencies. Air bridges produce minimal interconnect capacitance. The 3MI’s protective overcoat layer provides environmental robustness.

Applications: Power amplifiers, low-noise amplifiers, digital and analog phase shifters, digital and analog attenuators, limiters, mixers and multipliers.

0.35-µm Power pHEMT 3MI

The 0.35-µm Power pHEMT 3MI process utilizes delta gates in conjunction with a pHEMT material structure. This process offers the highest power density of any TriQuint pHEMT process without sacrificing efficiency or gain through 20 GHz. This process is capable of handling drain voltages up to 12V. Passives include 3 thick-metal interconnect layers, precision TaN resistors, GaAs resistors, through-substrate vias and 3 MIM capacitance densities. The via-under-cap process aids size compaction and offers excellent grounds at higher frequencies. Air bridges produce minimal interconnect capacitance. The 3MI’s protective overcoat layer provides environmental robustness.

Applications: Power amplifiers, low-noise amplifiers, digital and analog phase shifters, digital and analog attenuators, limiters, mixers and multipliers.